METHOD AND APPARATUS FOR DETERMINING DOPANT DENSITY IN SEMICONDUCTOR MATERIALS

摘要

This invention relates firstly to a method of determining dopant density in a semiconductor material, particularly a p-type semiconductor material. The method comprises the steps of generating a thermal gradient along a length of a sample of the semiconductor material; monitoring thermoelectric current of the sample of the semiconductor material; heating the sample of the semiconductor material whilst maintaining the thermal gradient along the length of the sample of the semiconductor material; determining an average sample temperature at which the monitored thermoelectric current changes sign; and determining a corresponding dopant density in the sample of the semiconductor material by using at least the determined average sample temperature. The invention extends also to an associated apparatus for determining or facilitating determining dopant densities in semiconductor materials.