| 摘要 |
PURPOSE: A memory device and a manufacturing method thereof are provided to miniaturize a memory element by simplifying a plane shape of a memory layer and reducing a dimension rule. CONSTITUTION: A memory device includes a first electrode(21), a second electrode, and a plurality of memory devices(20). The plurality of memory devices have memory layers(22) between a first electrode and a second electrode. The plurality of memory layers are dot shaped patterns. Two adjacent first electrodes share the dame memory layer. A plurality of access transistors are connected to the plurality of memory devices and are controlled by a plurality of word lines. |
