| 发明名称 |
METHOD OF FABRICATION OF A METAL OXIDE FILM AND ELECTRONIC DEVICES USING THE METAL OXIDE FILM |
| 摘要 |
<p>PURPOSE: A method for fabricating a metal oxide film and an electronic device using the metal oxide film are provided to improve crystallization by periodically stopping the deposition process of a thin film. CONSTITUTION: Metal oxide thin films(200) are formed on an underlying layer(100) by performing deposition process using a target shutter, RF power and plasma gas several times. The metal oxide thin films include a zinc oxide thin film. The metal oxide thin films are formed by a magnetron sputtering method. [Reference numerals] (AA) RF power</p> |
| 申请公布号 |
KR20130011531(A) |
申请公布日期 |
2013.01.30 |
| 申请号 |
KR20110072752 |
申请日期 |
2011.07.22 |
| 申请人 |
DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION |
发明人 |
LEE, GEUN HYOUNG |
| 分类号 |
H01L21/203;H01B13/00;H01L29/786;H01S5/02 |
主分类号 |
H01L21/203 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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