| 摘要 |
The material has a strip-shaped carrier (1) made of aluminum, and an intermediate layer (2) made of aluminum oxide and arranged on the carrier. An optical multi-layer system (3) is applied on the intermediate layer, and is comprised of upper dielectric and/or lower oxidic layers (4, 5). The intermediate layer has thickness (D2) of less than 30 nanometers. The lower layer consists of titanium-aluminum-mixed oxide, titanium-aluminum-mixed nitride and/or titanium-aluminum-mixed oxynitride, or chromium oxide, chromium nitride or chromium oxynitride. The upper layer consists of silicon oxides. |
