METHOD FOR FORMING A CONTACT HOLE AND ETCHER FOR FORMING THE SAME

摘要

PURPOSE: A method for forming a contact hole and an etching apparatus for forming the same are provided to form a high quality metal line by using contact holes and to improve the degree of integration. CONSTITUTION: A substrate(100) is loaded within a chamber. An etch stopper layer, an inter-layer insulating layer, a mask layer and photoresist pattern are successively formed on the substrate. A DC voltage is applied to the upper electrode and two different high frequency powers respectively are applied to the bottom electrode to generate plasma. While the temperature of the chamber side wall is maintained in the range of 200 to 100°C, a reaction gas is flowed to the chamber to etch the mask layer and the inter-layer insulating layer. The etch stopper layer is etched to form a contact hole(122).