| 摘要 |
PCT No. PCT/JP91/01796 Sec. 371 Date Oct. 13, 1993 Sec. 102(e) Date Oct. 13, 1993 PCT Filed Dec. 27, 1991.An apparatus for forming a thin film without spoiling contact resistances and breakdown voltage characteristics. The apparatus is so designed that at least one of first, second and third transferring means are kept in an atmosphere of an inert gas or of air of 10 ppb or less in moisture concentration, the first means being for transferring semiconductor substrate bodies from a device for exposing the surfaces of semiconductor substrate bodies to a device for forming conductive thin films on the exposed surfaces, the second means being for transferring substrate bodies from the device for exposing the surface of substrate bodies to a device for forming thermaloxidation films on the exposed surfaces, and the third means being for transferring substrate bodies from a device for exposing the surfaces of metallic wirings formed on substrate bodies to a device for forming a conductive thin film on the surfaces of the metallic wirings.
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