| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To impart satisfactory semiconductor properties to a silicon sheet used for a solar cell or the like, and to achieve the further increase in the efficiency of a solar cell using the silicon sheet. <P>SOLUTION: In the polycrystalline silicon sheet formed by bringing a silicon melt into contact with the body to be contacted, boron of 0.04 to 0.2 ppmw is comprised. It is preferable that the main face of both sides or either side is provided with ruggedness. Further, it is preferable that the period of the ruggedness of the main faces in both the sides is the same. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
