发明名称 Semiconductor device and method of fabricating same
摘要 A semiconductor device having any arbitrary size. The number of input/output terminals can be easily and selectively increased while using input/output amplifier circuit functional portions having the same circuit configuration, by using both ball bonding and TAB bonding techniques. Every two (4A, 4B) of the electrodes on the semiconductor device correspond to each one set of input/output amplifier circuits formed by three ones (6A, 6B, 6C) of the input/output amplifier circuits. The spacing S1 between the two electrodes (4A, 4B) corresponding to one set of input/output amplifier circuits is substantially equal to the spacing S2 between the electrode 4B and the adjacent electrode 4C of one adjacent set of input/output amplifier circuits and also to the spacing S3 between the electrode 4A and the adjacent electrode 4D of the other adjacent set of input/output amplifier circuits.
申请公布号 US5510654(A) 申请公布日期 1996.04.23
申请号 US19950460643 申请日期 1995.06.02
申请人 SONY CORPORATION 发明人 NISHINO, TOMOKI;TAKEDA, MASASHI
分类号 H01L21/822;H01L21/60;H01L23/485;H01L23/528;H01L27/04;(IPC1-7):H01L23/48 主分类号 H01L21/822
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