FAST ANNEALING OF GAN LEDS

摘要

PURPOSE: A rapid annealing method of GaN LED is provided to increase the concentration of activated dopants in a p-GaN and to reduce contact resistance. CONSTITUTION: A GaN multilayer structure(30) having an n-GaN layer and a p-GaN layer(50) is formed. A rapid annealing process is performed on the p-GaN layer using laser or a flash lamp. A transparent conductor layer is formed on the GaN multilayer structure. A p-contact is formed on the transparent conductor layer. An n-contact is formed on the n-GaN layer.