FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
摘要
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
申请公布号
SG186428(A1)
申请公布日期
2013.01.30
申请号
SG20120094298
申请日期
2011.06.21
申请人
MICRON TECHNOLOGY, INC.
发明人
HU, YONGJUN, JEFF;MCTEER, EVERETT, A.;SMYTHE, JOHN, A. III;SANDHU, GURTEJ, S.