METHOD FOR PLANARIZING A SUBSTRATE USING ELECTRO-POLISHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PURPOSE: A method for planarizing a substrate using electro-polishing and a method for manufacturing semiconductor device including the same are provided to form a penetration electrode and to planarize a substrate. CONSTITUTION: The metal for a seed is deposited on a substrate having a hole. A first and a second seed layer(230, 240) respectively are connected to the surface of the substrate and the inner side of the hole. An electroplating process is performed on the first seed layer to form an electrode(220). A polishing process is performed to separate the first seed layer from the second seed layer and to remove a protruded part of the electrode. [Reference numerals] (AA) Second electrolyte