发明名称 |
Integrated semiconductor device having a thyristor |
摘要 |
An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inner transistor to be biased into conduction. Furthermore, a current flow takes place via the outer npn-transistors and the inner npn-transistor. The integrated semiconductor device having a thyristor minimizes interference produced in neighboring components.
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申请公布号 |
US5581096(A) |
申请公布日期 |
1996.12.03 |
申请号 |
US19940343409 |
申请日期 |
1994.11.22 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
KUGELMANN, ADOLF;MAROLT, VINKO;GUENTHER, UWE;SCHATZ, OLIVER |
分类号 |
H01L29/74;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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