发明名称 Integrated semiconductor device having a thyristor
摘要 An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inner transistor to be biased into conduction. Furthermore, a current flow takes place via the outer npn-transistors and the inner npn-transistor. The integrated semiconductor device having a thyristor minimizes interference produced in neighboring components.
申请公布号 US5581096(A) 申请公布日期 1996.12.03
申请号 US19940343409 申请日期 1994.11.22
申请人 ROBERT BOSCH GMBH 发明人 KUGELMANN, ADOLF;MAROLT, VINKO;GUENTHER, UWE;SCHATZ, OLIVER
分类号 H01L29/74;(IPC1-7):H01L29/74;H01L31/111 主分类号 H01L29/74
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