| 摘要 |
It is aimed to provide a photoelectric conversion device having improved conversion efficiency, and a method for manufacturing the photoelectric conversion device. For achieving this object, a photoelectric conversion device including a first semiconductor layer and a second semiconductor layer is employed. In the photoelectric conversion device, the first semiconductor layer includes one principal surface on which a plurality of projections are scattered, includes a I-III-VI group compound semiconductor, and has a first conductivity type. The second semiconductor layer is disposed on the one principal surface, has a thickness in a normal direction of the one principal surface, and has a second conductivity type different from the first conductivity type. Further, a first distance along which each of the projections is projected in the normal direction is longer than a second distance along which the second semiconductor layer is provided in the normal direction. |
