Method of reducing buried contact resistance in SRAM

摘要

A new method of forming improved buried contact junctions is described. A buried contact is formed within a semiconductor substrate by dopant diffusion from an overlying polysilicon layer. The second polysilicon layer is patterned to form a polysilicon contact overlying the buried contact junction wherein a portion of the buried contact within said semiconductor substrate is exposed. The polysilicon layer is overetched whereby a trench is etched into the exposed semiconductor substrate. An extra implant is implanted into the semiconductor substrate around the trench. Source and drain regions are formed wherein the buried contact connects to one of the source and drain regions through the extra implant around the trench completing the formation of the buried contact in the fabrication of an integrated circuit.