| 摘要 |
Tensile stress is applied to the channel region of an N-type metal oxide semiconductor (NMOS) transistor by directly forming a material having a tensile stress, for example, tungsten, in the contact holes on the source region and drain region of the NMOS. Then, the dummy gate layer in the gate stack of the NMOS transistor is removed, so as to further reduce the counter force of the gate stack on the channel region, thereby increasing the tensile stress in the channel region, enhancing the drift mobility of the carrier, and improving the performance of the transistor. The present invention avoids using a separate stress layer to create tensile stress in the channel region of an NMOS transistor, which advantageously simplifies the transistor manufacturing process and improves sizes and performance of the transistor.
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