发明名称 |
Chemically amplified positive photoresist composition and pattern forming process |
摘要 |
A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
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申请公布号 |
US8361693(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20100815787 |
申请日期 |
2010.06.15 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;MASUNAGA KEIICHI;TANAKA AKINOBU;DOMON DAISUKE;WATANABE SATOSHI;OHSAWA YOUICHI;OHASHI MASAKI |
发明人 |
MASUNAGA KEIICHI;TANAKA AKINOBU;DOMON DAISUKE;WATANABE SATOSHI;OHSAWA YOUICHI;OHASHI MASAKI |
分类号 |
G03F7/00;G03F7/004;G03F7/028 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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