发明名称 Semiconductor assemblies and methods of manufacturing such assemblies including trench and channel intersects with through-hole in the mold material
摘要 Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches to an intermediate depth in a molded portion of a molded wafer having a plurality of dies arranged in rows and columns. The method also includes removing material from a second side of the molded portion at areas aligned with the first side trenches, wherein removing the material forms openings through the molded portion. The method further includes forming a plurality of electrical contacts at the second side of the molded portion at the openings and electrically connecting the second side contacts to corresponding bond-sites on the dies.
申请公布号 US8362594(B2) 申请公布日期 2013.01.29
申请号 US201113074938 申请日期 2011.03.29
申请人 MICRON TECHNOLOGY, INC.;CHUA SWEE KWANG;BOON SUAN JEUNG;CHIA YONG POO 发明人 CHUA SWEE KWANG;BOON SUAN JEUNG;CHIA YONG POO
分类号 H01L21/44;H01L21/31;H01L21/469 主分类号 H01L21/44
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