发明名称 |
Junction-photovoltage method and apparatus for contactless determination of sheet resistance and leakage current of semiconductor |
摘要 |
A junction-photovoltage method and apparatus for contactless determination of an electrical/physical parameter of a semiconductor structure having at least one p-n junction located at a surface is disclosed. In one aspect, the method includes illuminating the surface with the p-n junction with a light beam of a first wavelength to create excess carriers at the surface. The method also includes modulating the light intensity of the light beam at a single predefined frequency. The method also includes determining a first photo-voltage at a first position inside the illuminated area and a second photo-voltage at at least a second position outside the illuminated area. The method also includes calculating an electrical/physical parameter of the semiconductor structure based on the first and second photo-voltage.
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申请公布号 |
US8364428(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20090620349 |
申请日期 |
2009.11.17 |
申请人 |
IMEC;SCHAUS FREDERIC;CLARYSSE TRUDO |
发明人 |
SCHAUS FREDERIC;CLARYSSE TRUDO |
分类号 |
G01R13/02;G01R13/04;G01R13/14;G01R13/22 |
主分类号 |
G01R13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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