发明名称 Semiconductor device
摘要 The resistance of an integrated circuit against ESD (electrostatic discharge) is improved without disturbing improvement of the performance and reduction of size of the integrated circuit. A protection circuit is interposed between an input and output terminals. When ESD is generated, the input and output terminals are short-circuited by the protection circuit, so that overvoltage application to the circuit is prevented. The circuit is electrically connected to the input and output terminals by a connection wiring. The circuit has a plurality of electrical connection portions between the circuit and the connection wiring, and the connection wiring is formed such that the wiring resistance between the input or output terminal and each of the connection portions is the same. Accordingly, if ESD is generated, voltage application on only one of the connection portions is prevented, whereby the possibility that the circuit will be broken by ESD is decreased.
申请公布号 US8363365(B2) 申请公布日期 2013.01.29
申请号 US20090478123 申请日期 2009.06.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;FUKUOKA OSAMU;SHISHIDO HIDEAKI 发明人 FUKUOKA OSAMU;SHISHIDO HIDEAKI
分类号 H02H9/00 主分类号 H02H9/00
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