发明名称 Semiconductor device having a bias resistor circuit
摘要 According to one embodiment, a semiconductor device provided with an input terminal and a resistor circuit is presented. The resistor circuit is provided with first and second transistors, a first resistor, a capacitor and a capacitor. A drain of the first transistor is connected to the input terminal. One end of the first resistor is connected to a gate of the first transistor. A drain of the second transistor is connected to a source of the first transistor. A gate of the second transistor is connected to the other end of the first resistor. A source of the second transistor is connected to a power supply of a source side. The capacitor is connected between the drain and the gate of the first transistor. The voltage supply circuit is connected to the other end of the first resistor and the gate of the second transistor.
申请公布号 US8362822(B2) 申请公布日期 2013.01.29
申请号 US201113045699 申请日期 2011.03.11
申请人 KABUSHIKI KAISHA TOSHIBA;IMAYAMA TERUO 发明人 IMAYAMA TERUO
分类号 G11C5/14 主分类号 G11C5/14
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