Semiconductor device and substrate with chalcogen doped region

摘要

An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.