| 摘要 |
A light emitting device (10) comprises a first body (12) of an indirect bandgap semiconductor material. A first junction region (18) in the body is formed between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction (20) region in the body is formed between the second region of the body and a third region of the body of the first doping kind. The first and second junction regions being spaced from one another by not further than a minority carrier diffusion length. A terminal arrangement is connected to the first, second and third regions of the body for, in use, reverse biasing the first junction region into avalanche or field emission mode and for forward biasing the second junction region to inject carriers into the first junction region. A second body (22) of an isolation material is located immediately adjacent at least one wall of the third region, thereby to reduce parasitic injection from the third region.
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