发明名称 |
Methods for performing fail test, block management, erasing and programming in a nonvolatile memory device |
摘要 |
Methods for performing a fail test, block management, erase operations and program operations are used in a nonvolatile memory device having a block switch devoid of a fuse and a PMOS transistor. A method for performing a fail test in a nonvolatile memory device includes performing a fail test for a memory cell block; storing good block information in a block information store associated with the corresponding block when the memory cell block is a good block; and repeating the performing and storing steps for all memory cell blocks.
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申请公布号 |
US8365026(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20080130994 |
申请日期 |
2008.05.30 |
申请人 |
HYNIX SEMICONDUCTOR INC.;WANG JONG HYUN;JANG CHAE KYU;PARK SE CHUN |
发明人 |
WANG JONG HYUN;JANG CHAE KYU;PARK SE CHUN |
分类号 |
G11C29/44;G11C29/56 |
主分类号 |
G11C29/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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