发明名称 Method of manufacturing silicon film by using silicon solution process
摘要 Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.
申请公布号 US8361561(B2) 申请公布日期 2013.01.29
申请号 US20100659329 申请日期 2010.03.04
申请人 SAMSUNG ELECTRONICS CO., LTD.;LEE JUNG-HYUN;MA DONG-JOON 发明人 LEE JUNG-HYUN;MA DONG-JOON
分类号 B05D3/06 主分类号 B05D3/06
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