发明名称 |
Method of manufacturing silicon film by using silicon solution process |
摘要 |
Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.
|
申请公布号 |
US8361561(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20100659329 |
申请日期 |
2010.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;LEE JUNG-HYUN;MA DONG-JOON |
发明人 |
LEE JUNG-HYUN;MA DONG-JOON |
分类号 |
B05D3/06 |
主分类号 |
B05D3/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|