发明名称 Semiconductor device
摘要 A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end; portion thereof extending over the isolation layer.
申请公布号 US8362556(B2) 申请公布日期 2013.01.29
申请号 US20100835514 申请日期 2010.07.13
申请人 MAGNACHIP SEMICONDUCTOR, LTD.;CHA JAE-HAN;LEE KYUNG-HO;KIM SUN-GOO;CHOI HYUNG-SUK;KIM JU-HO;CHAE JIN-YOUNG;OH IN-TAEK 发明人 CHA JAE-HAN;LEE KYUNG-HO;KIM SUN-GOO;CHOI HYUNG-SUK;KIM JU-HO;CHAE JIN-YOUNG;OH IN-TAEK
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
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