| 摘要 |
PURPOSE: A light emitting device is provided to improve light extraction efficiency by forming a third semiconductor layer on a transmissive electrode layer with a preset thickness to easily form a light extraction structure. CONSTITUTION: A first electrode layer(120) is formed on a support substrate(110). A light emitting structure(130) is formed on the first electrode layer. A light emitting structure includes a first semiconductor(132), a second semiconductor layer(136), and an active layer(134). A transmissive electrode layer(140) is formed on the light emitting structure. A third semiconductor layer(150) is formed on the transmissive electrode layer. A light extracting structure(160) is formed on the third semiconductor layer.
|
