On-chip radiation dosimeter

摘要

A method for forming a semiconductor device includes forming an implant mask on a substrate, such that a first portion of the substrate is located under the implant mask, and a second portion of the substrate is exposed; performing oxygen ion implantation of the substrate; removing the implant mask; and forming a first field effect transistor (FET) on the first portion of the substrate, and forming a second FET on the second portion of the substrate, wherein the second FET has a higher radiation sensitivity than the first FET.