| 摘要 |
A method for manufacturing an LCD is provided to crystallize a silicon layer at a relatively low temperature through alternating magnetic field crystallization, thereby simplifying the manufacturing process. A metal pattern(111), an insulating layer(113), and an amorphous silicon layer(115) are sequentially deposited on a substrate(110). An alternating magnetic field is applied to the amorphous silicon layer to form a crystallized silicon layer. The crystallized silicon layer is pattern-etched to from an active layer. The metal pattern is formed by forming a metal layer on the substrate and pattern-etching the metal layer. The metal layer is formed by using a metal material having a melting point of no less than 700 degree. |
