摘要 |
A semiconductor device, includes a first wiring pattern in a first region, a second wiring pattern in a second region, and at least one first dummy pattern formed in the first region and at least one second dummy pattern formed in the second region. A total area of the at least one first dummy pattern is the same as a total area of the at least one second dummy pattern and a total length of pattern periphery of the at least one second dummy pattern is longer than a total length of pattern periphery of the at least one first dummy pattern. The first region and the second region have same area.
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