发明名称 |
INTEGRATED CIRCUIT PROCESS YIELD ENHANCING TECHNIQUE FOR REDUCING UNDESIRED WATER CONTENT HOLDING OF DIELECTRIC AND HYDROGEN DISCHARGE DIFFUSION INFLUENCE |
摘要 |
PROBLEM TO BE SOLVED: To reduce harmful influence of water content contaminants by passivating an integrated circuit involving a first and second layers to partly absorb contaminants existing on the second layer by the first layer. SOLUTION: An integrated circuit 10 has one element partly surrounded by a first layer, say inter-layer dielectric layer 30 having a relatively high contaminant absorption. This layer 30 is annealed to partly remove water contained therein. A second layer, say, an inter-layer ferroelectric glass layer 34 having a relatively low contaminant absorption is laminated adjacent the dielectric layer 30. On dielectric layer 30 and a ferroelectric glass layer 34, a passivation layer 66 is overlaid to partly absorb any of contaminants existing on the glass layer 34 by the dielectric layer 30. |
申请公布号 |
JPH10144681(A) |
申请公布日期 |
1998.05.29 |
申请号 |
JP19970276032 |
申请日期 |
1997.10.08 |
申请人 |
RAMTRON INTERNATL CORP |
发明人 |
PERINO STANLEY C;MITRA SANJAY;ARGOS GEORGE JR;HARPER HOLLI |
分类号 |
H01L21/8247;H01L21/316;H01L21/8246;H01L23/00;H01L23/31;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/316;H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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