发明名称 INTEGRATED CIRCUIT PROCESS YIELD ENHANCING TECHNIQUE FOR REDUCING UNDESIRED WATER CONTENT HOLDING OF DIELECTRIC AND HYDROGEN DISCHARGE DIFFUSION INFLUENCE
摘要 PROBLEM TO BE SOLVED: To reduce harmful influence of water content contaminants by passivating an integrated circuit involving a first and second layers to partly absorb contaminants existing on the second layer by the first layer. SOLUTION: An integrated circuit 10 has one element partly surrounded by a first layer, say inter-layer dielectric layer 30 having a relatively high contaminant absorption. This layer 30 is annealed to partly remove water contained therein. A second layer, say, an inter-layer ferroelectric glass layer 34 having a relatively low contaminant absorption is laminated adjacent the dielectric layer 30. On dielectric layer 30 and a ferroelectric glass layer 34, a passivation layer 66 is overlaid to partly absorb any of contaminants existing on the glass layer 34 by the dielectric layer 30.
申请公布号 JPH10144681(A) 申请公布日期 1998.05.29
申请号 JP19970276032 申请日期 1997.10.08
申请人 RAMTRON INTERNATL CORP 发明人 PERINO STANLEY C;MITRA SANJAY;ARGOS GEORGE JR;HARPER HOLLI
分类号 H01L21/8247;H01L21/316;H01L21/8246;H01L23/00;H01L23/31;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/316;H01L21/824 主分类号 H01L21/8247
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