| 摘要 |
A polysilicon film to be a resistor element is formed on a resistor element formation region of a semiconductor substrate while a polysilicon gate and high concentration impurity regions are formed on a transistor formation region. Thereafter, an insulating film is formed on the entire surface of the semiconductor substrate. Then, a photoresist film is formed to cover the transistor formation region, and a conductive impurity is ion-implanted into the polysilicon film. Next, the photoresist film is removed by ashing.
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