发明名称 Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
摘要 A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.
申请公布号 US8363461(B2) 申请公布日期 2013.01.29
申请号 US200913003290 申请日期 2009.06.26
申请人 NEC CORPORATION;SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI 发明人 SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI
分类号 G11C11/00;G11C11/14;G11C11/15 主分类号 G11C11/00
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