发明名称 |
Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory |
摘要 |
A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.
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申请公布号 |
US8363461(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US200913003290 |
申请日期 |
2009.06.26 |
申请人 |
NEC CORPORATION;SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI |
发明人 |
SUZUKI TETSUHIRO;FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;OHSHIMA NORIKAZU;ISHIWATA NOBUYUKI |
分类号 |
G11C11/00;G11C11/14;G11C11/15 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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