发明名称 |
Semiconductor device including MISFET and its manufacture method |
摘要 |
An active region made of Si or SiGe is formed in a surface part of a substrate. A gate electrode is disposed over the active region. A gate insulating film is disposed between the gate electrode and the substrate. A source and a drain are formed in the surface part of the substrate on sides of the gate electrode. A surface of the active region under the gate electrode includes a slope surface being upward from a border of the active region toward an inner side of the active region. The slope surface has a crystal plane equivalent to (331).
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申请公布号 |
US8362530(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20100964318 |
申请日期 |
2010.12.09 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED;FUKUTOME HIDENOBU |
发明人 |
FUKUTOME HIDENOBU |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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