发明名称 Integrated circuit device and method for manufacturing integrated circuit device
摘要 An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
申请公布号 US8362485(B2) 申请公布日期 2013.01.29
申请号 US201113308582 申请日期 2011.12.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMADA DAIKI;DOZEN YOSHITAKA;SUGIYAMA EIJI;TAKAHASHI HIDEKAZU 发明人 YAMADA DAIKI;DOZEN YOSHITAKA;SUGIYAMA EIJI;TAKAHASHI HIDEKAZU
分类号 H01L29/04 主分类号 H01L29/04
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