METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to stably fill a trench and a via hole with conductive materials by removing a second hard mask pattern after the trench and the via hole are formed. CONSTITUTION: A substrate including a first trench, a first hard mask pattern, and a second hard mask pattern is provided(S110). The first trench is filled by forming filling materials on the interlayer dielectric layer and the second hard mask pattern(S120). The second hard mask pattern is exposed by removing a part of the filling materials(S130). The second hard mask pattern is removed(S140). The remaining filling materials are removed(S150). A wire is formed by filing the first trench with conductive materials(S160). [Reference numerals] (AA) Start; (BB) End; (S100) Providing a substrate including a first trench and first and second hard mask patterns; (S120) Filling the first trench with filling materials; (S130) Exposing the second hard mask pattern by removing a part of the filling materials; (S140) Removing the second hard mask pattern; (S150) Removing the remaining filling materials; (S160) Forming a wire