| 摘要 |
PURPOSE: Improved bonding surfaces for directly bonding semiconductor structures are provided to easily bond a device structure of a first semiconductor structure to a device structure of a second semiconductor structure with a conductive material-conductive material direct bonding process. CONSTITUTION: A device layer(101) includes a vertically extended conductive via and a horizontally extended conductive trace. A device structure(106) includes conductive metal arranged in a concave part. A surface of the device structure is exposed through dielectric materials(102). Additional dielectric materials are provided to a surface(103) of the dielectric materials. An exposed main surface(114) of the additional dielectric materials is planarized to form another semiconductor structure(120). |
