| 摘要 |
PURPOSE: A monitoring method of a plasma etching process using actinometry is provided to measure the variation in an etch rate of the process by quantitatively analyzing the state change of plasma. CONSTITUTION: Processing gas is supplied to the inside of a plasma generating chamber. The processing gas contains fluorine. Plasma is generated. The amount of the plasma generated in the plasma generating chamber is measured using an optical emission spectroscope. |
