| 摘要 |
<p>PURPOSE: Methods for manufacturing a thermopile and an infrared sensor using an SOI(Silicon On Insulator) substrate are provided to have high sensitivity by having high Seebeck constant and high thermal resistance. CONSTITUTION: An SOI substrate(110) is prepared. A lower silicon layer(112), a first insulating layer(114) and an upper silicon layer(116) are successively laminated on the SOI substrate. P-type silicon strips and n-type silicon strips are formed. The p-type silicon strips and the n-type silicon strips are separated by patterning the upper silicon layer. A thermopile is formed by connecting metal electrode.</p> |
