发明名称 |
A SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME |
摘要 |
In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.
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申请公布号 |
CA2783438(A1) |
申请公布日期 |
2013.01.26 |
申请号 |
CA20122783438 |
申请日期 |
2012.07.19 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ARTHUR, STEPHEN DALEY;MATOCHA, KEVIN;SANDVIK, PETER;STUM, ZACHARY;LOSEE, PETER;MCMAHON, JAMES |
分类号 |
H01L21/335;H01L29/772 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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