Method for forming bearing structure of interconnection levels, involves forming openings in bearing structure from side to boundary by etching, and covering bottom part and sides of openings by layer of conductive material

摘要

The method involves forming interconnection levels (3, 5) on two sides of a silicon wafer (1). Openings are formed in a bearing structure from a side to a boundary by etching, where the boundary is formed between the silicon wafer and the interconnect levels of a face of the bearing structure. A bottom part and sides of the openings are covered by a layer of a conductive material (57). A polymer layer (58) is deposited over the layer of conductive material to fill the openings formed in the bearing structure. An insulating layer (56) is formed on walls of the openings. An independent claim is also included for a device for forming a bearing structure of interconnection levels.