| 摘要 |
A CMOS amplifier output stage including a complementary output MOSFET transistor pair whose channels are connected together in series between a supply voltage and a reference potential, and whose gates are driven by a complementary MOSFET level shifting transistor pair and by bias voltage and current circuitry. Preferably, the level shifting transistor pair is a diode-connected NMOS transistor and a diode-connected PMOS transistor, the bias circuitry includes a source follower which drives the source of one of the diode-connected transistors with a current determined by an input voltage, all active elements of the invention are MOSFET transistors, and the minimum supply voltage required for operation is (VGS+2VSAT), where VGS is the largest source to gate voltage of the MOSFET transistors and VSAT is the largest source to drain voltage of the MOSFET transistors during operation in the saturation region. This allows operation with a supply voltage as low as 1.8 volts with MOSFET transistors suitable for typical applications. The quiescent output current is well controlled and is determined by the device sizes of the MOSFET transistors. The invention can be implemented as part of a standard cell amplifier for any of a variety of mixed analog/digital circuits, even using high density, low voltage processes.
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