METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing an MOSFET (1) is provided with: a step of introducing an impurity into a silicon carbide layer (10); a step of forming a carbon layer (81) on a surface layer portion of the silicon carbide layer (10) by selectively removing silicon from the surface layer portion, said silicon carbide layer having the impurity introduced therein; and a step of activating the impurity by heating the silicon carbide layer (10) having the carbon layer (81) formed thereon.