| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type exposure mask which can accurately transfer a pattern to a wafer. <P>SOLUTION: A reflection type exposure mask comprises: a substrate 23; a light reflection layer 24 formed on the substrate, which reflects exposure light; and a light absorption layer 25 formed on the light reflection layer, which absorbs the exposure light. The mask comprises: a pattern formation region 21 consisting of a portion where the light absorption layer is partly removed to expose the light reflection layer and a portion where the light absorption layer is not removed to be left as it is; a first portion 22a which is a light shielding portion surrounding the pattern formation region; and a second portion 22b which is a light shielding portion extending from a side in parallel with a prescribed direction composing the first portion to the prescribed direction. The prescribed direction is a direction parallel to a direction of a relative movement between an apparatus holding the reflection type exposure mask and the exposure light. The second portion is a portion in which a measurement point is to be set. The first portion and the second portion are regions where a first light absorption layer and a light reflection layer are removed to expose the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
