| 发明名称 |
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, WIRING BOARD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WIRING BOARD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of processes for manufacturing a wiring board when a semiconductor element is formed on the wiring board. <P>SOLUTION: First wiring 232 is provided on one surface of a core layer 200. A semiconductor layer 236 is formed on the first wiring 232 and that portion of one surface of the core layer 200 which is positioned around the first wiring 232. The first wiring 232 and the semiconductor layer 236 form a semiconductor element. In the present embodiment, the semiconductor element is a transistor 230 using the first wiring 232 as a gate electrode and has a gate insulating film 234 between the semiconductor layer 236 and the first wiring 232. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013016746(A) |
申请公布日期 |
2013.01.24 |
| 申请号 |
JP20110150402 |
申请日期 |
2011.07.06 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
INOUE HISAYA;KANEKO TAKAAKI;HAYASHI YOSHIHIRO |
| 分类号 |
H01L23/32;H01L21/3205;H01L21/336;H01L21/768;H01L21/8242;H01L21/8246;H01L23/12;H01L23/522;H01L27/00;H01L27/105;H01L27/108;H01L29/786;H01L43/02;H01L43/08;H01L45/00;H01L49/00;H05K3/46 |
主分类号 |
H01L23/32 |
| 代理机构 |
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