发明名称 |
STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE |
摘要 |
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region and having silicide features; and a single floating gate non-volatile memory device disposed in the memory region, free of silicide and having a first gate electrode and a second gate electrode laterally spaced from each other.
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申请公布号 |
US2013020623(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201113184823 |
申请日期 |
2011.07.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;TSUI YING-KIT;TSENG HUANG-WEN |
发明人 |
TSUI YING-KIT;TSENG HUANG-WEN |
分类号 |
H01L27/06;H01L21/336 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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