发明名称 |
METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor.
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申请公布号 |
US2013020657(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201113188536 |
申请日期 |
2011.07.22 |
申请人 |
UNITED MICROELECTRONICS CORP.;LU TSUO-WEN;LEE TZUNG-YING;CHEN JEI-MING;HSU CHUN-WEI;LIN YU-MIN;CHANG CHIA-LUNG;CHIEN CHIN-CHENG;CHAN SHU-YEN |
发明人 |
LU TSUO-WEN;LEE TZUNG-YING;CHEN JEI-MING;HSU CHUN-WEI;LIN YU-MIN;CHANG CHIA-LUNG;CHIEN CHIN-CHENG;CHAN SHU-YEN |
分类号 |
H01L29/78;H01L21/28;H01L21/76 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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