| 摘要 |
<p>In a film forming method using gas cooling, a decrease in a film formation rate and an excessive load on a vacuum pump due to the introduction of the gas are avoided while achieving an adequate cooling effect. A thin film forming apparatus of the present invention includes: a cooling body 10 provided close to a rear surface of a substrate 7 in a thin film forming region 14; a gas introducing unit configured to for introduce a gas to between the cooling body 10 and the rear surface of the substrate 7; and a gap maintaining unit 11 contacting the rear surface of the substrate 7 for dividing the thin film forming region 14 into a first thin film forming region 14a and a second thin film forming region 14b where a film forming speed is lower than that in the first thin film forming region 14a, and maintaining a gap between the cooling body 10 and the substrate 7. In addition, a condition for the cooling is set such that an amount of cooling in the first thin film forming region 14a is larger than an amount of cooling in the second thin film forming region 14b.</p> |
