| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor porcelain composition which can shift the Curie temperature in a positive direction without using Pb and obtain a semiconductor porcelain composition whose resistivity at room temperature is greatly reduced, and a method for producing a semiconductor porcelain composition which can impart a uniform property also to the interior of a material with no complex heat treatment even if the material has a shape of a relatively great thickness. <P>SOLUTION: In this method for producing a semiconductor porcelain composition which has a compositional formula represented by [(Bi<SB POS="POST">0.5</SB>Na<SB POS="POST">0.5</SB>)<SB POS="POST">x</SB>(Ba<SB POS="POST">1-y</SB>R<SB POS="POST">y</SB>)<SB POS="POST">1-x</SB>]TiO<SB POS="POST">3</SB>(where R is at least one of La, Dy, Eu, Gd, Y; and x and y satisfy 0<x≤0.14, 0.002<y≤0.02) the sintering of the composition is carried out in an inert gas atmosphere having oxygen concentration of 1% or less, and thus, the resistivity at room temperature can be remarkably reduced and an uniform property can be imparted also to the interior of the resultant material. <P>COPYRIGHT: (C)2013,JPO&INPIT |
