发明名称 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing technology which can inhibit susceptor deformation even in a high temperature treatment. <P>SOLUTION: A substrate processing apparatus comprises: a loading body on which a substrate is loaded; a loading body support supporting a plurality of loading bodies; a reaction tube housing the loading body support; and a heating part provided on the outside of the reaction tube for heating the substrate housed in the reaction tube. A surface of the loading body, which contacts the substrate and a surface of the loading body, which contacts the loading body support are subject to surface process so as to have the same level of roughness. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013016635(A) 申请公布日期 2013.01.24
申请号 JP20110148288 申请日期 2011.07.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 IZUMI MANABU
分类号 H01L21/205;C23C16/458;H01L21/22;H01L21/31;H01L21/683 主分类号 H01L21/205
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