| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor in which the carrier density of a protection film side interface of an oxide semiconductor layer is smaller than that of a gate insulating layer side and the film thickness of the oxide semiconductor layer is optimized, and to provide a method of manufacturing the same. <P>SOLUTION: When an oxide insulator is formed on an oxide semiconductor layer as a protection film, a film is formed in an atmosphere containing an oxidizing gas, and the carrier density around an interface of the oxide semiconductor is made lower than that of an insulation layer side. In addition, the design film thickness of the oxide semiconductor film is set to 30 nm±15 nm, thus optimizing a field effect mobility μ, an On/Off ratio, and an S value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
